Enhancement of WSe2 FET Performance Using Low-Temperature Annealing
Enhancement of WSe2 FET Performance Using Low-Temperature Annealing
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DOI：
10.1007/s11664-020-08087-w
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发表时间：
2020-03
影响因子：
2.1
通讯作者：
Zahabul Islam;Azimkhan Kozhakhmetov;Joshua Robinson;A. Haque
中科院分区：
文献类型：
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作者：
Zahabul Islam;Azimkhan Kozhakhmetov;Joshua Robinson;A. Haque
在这项研究中，我们研究了二维材料的非热退火过程。而不是高温，我们利用电子风力在近室温条件下。它是一种原子级的机械力，只作用在缺陷区域，这被提出来提供非常高的缺陷迁移率。该过程是证明背栅WSe2晶体管。通过使电流通过器件沟道同时主动去除焦耳加热来执行电子风力退火。我们观察到大约一个数量级的漏极电流的增加，验证我们的假设的迁移率赋予的电子风力迁移和消除缺陷。为了解释室温退火背后的原子机制，我们进行分子动力学模拟。缺陷湮灭和局部金属相变的计算证据支持了实验结果，这可以提高器件的性能。所提出的技术的进一步发展将可能导致时间和成本效益的二维材料为基础的设备的后处理。
In this study, we investigate a non-thermal annealing process for two-dimensional materials. Instead of high temperature, we exploit the electron wind force at near-room temperature conditions. It is an atomic-scale mechanical force that acts only in the defective regions, which is proposed to provide very high defect mobility. The process is demonstrated on back-gated WSe2transistors. Electron wind force annealing was performed by passing current through the device channel while actively removing the Joule heating. We observe approximately one order of magnitude increase in the drain current, validating our hypothesis on the mobility imparted by the electron wind force to migrate and eliminate defects. To explain the atomistic mechanisms behind the room-temperature annealing, we perform molecular dynamics simulation. Computational evidence of defects annihilation and local metallic phase transformation supports the experimental results, which can enhance the device performance. Further developments of the proposed technique will potentially lead to time- and cost-effective post-processing of two-dimensional materials-based devices.