Probing the dye-semiconductor interface in dye-sensitized NiO solar cells
Probing the dye-semiconductor interface in dye-sensitized NiO solar cells
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DOI：
10.1063/5.0023000
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发表时间：
2020-11-14
影响因子：
4.4
通讯作者：
Gibson, Elizabeth A.
中科院分区：
文献类型：
--
作者：
Potts, Nathan T. Z.;Sloboda, Tamara;Gibson, Elizabeth A.
p型染料敏化太阳能电池（p-DSSC）的开发提供了组装串联光电化学太阳能电池的机会，该串联光电化学太阳能电池具有比基于TiO 2的光阳极更高的效率，这是由O’Regan和Gratzel开创的[Nature 353，737-740（1991）]。本文描述了在p-DSSC的界面行为的调查，使用一系列的BODIPY染料，BOD 1 -3。这三种染料具有不同的结构和电子性质，导致它们在p-DSSC中表现出不同的性能。我们应用光电子能谱和瞬态吸收光谱来合理化这些差异。结果表明，染料的电子轨道与NiO半导体的价带适当地对齐，以促进光诱导电荷转移，但电荷复合太快，不能通过电解质有效地再生染料。我们将这种快速复合归因于染料的电子结构和NiO表面存在的Ni 3+复合位点，这限制了太阳能电池的效率。
The development of p-type dye-sensitized solar cells (p-DSSCs) offers an opportunity to assemble tandem photoelectrochemical solar cells with higher efficiencies than TiO2-based photoanodes, pioneered by O'Regan and Gratzel [Nature 353, 737-740 (1991)]. This paper describes an investigation into the behavior at the interfaces in p-DSSCs, using a series of BODIPY dyes, BOD1-3. The three dyes have different structural and electronic properties, which lead to different performances in p-DSSCs. We have applied photoelectron spectroscopy and transient absorption spectroscopy to rationalize these differences. The results show that the electronic orbitals of the dyes are appropriately aligned with the valence band of the NiO semiconductor to promote light-induced charge transfer, but charge-recombination is too fast for efficient dye regeneration by the electrolyte. We attribute this fast recombination, which limits the efficiency of the solar cells, to the electronic structure of the dye and the presence of Ni3+ recombination sites at the NiO surface.