HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate
HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate
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在 GaN 模板化 (111) Si 衬底上 HVPE 生长厚 GaN 层
DOI：
10.1002/pssc.200303512
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
N. Sawaki
中科院分区：
文献类型：
--
作者：
Y. Nishimura;Y. Honda;M. Yamaguchi;N. Sawaki
尝试在 (111) Si 衬底上进行厚 GaN 的氢化物气相外延 (HVPE) 生长。为了避免HCl环境下对衬底表面造成致命损伤并获得高生长速率，采用了两步生长方法；第一个低生长速率步骤采用低 HCl 流速，然后是第二个高生长速率步骤。结果，获得了厚GaN的平坦表面。 77 K 时的光致发光光谱的半峰全宽窄至 17.7 meV。
The hydride vapour phase epitaxial (HVPE) growth of thick GaN was attempted on a (111) Si substrate. In order to avoid fatal damage to the substrate surface in the HCl ambient and to get a high growth rate, a two-step growth method was adopted; the first low growth rate step with low HCl flow rate followed by a second high growth rate step. As the result, a flat surface of thick GaN was obtained. The full width at half maximum of the photoluminescence spectra at 77 K was as narrow as 17.7 meV.