YBa2Cu3O7-δ films on Si with Y-stabilized ZrO2 and Y2O3 buffer layers : high-resolution electron microscopy of the interfaces
YBa2Cu3O7-δ films on Si with Y-stabilized ZrO2 and Y2O3 buffer layers : high-resolution electron microscopy of the interfaces
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Si 上带有 Y 稳定 ZrO2 和 Y2O3 缓冲层的 YBa2Cu3O7-δ 薄膜：界面的高分辨率电子显微镜
DOI：
10.1063/1.107608
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发表时间：
1992
影响因子：
4
通讯作者：
T. Matthée
中科院分区：
文献类型：
--
作者：
A. Bardal;M. Zwerger;O. Eibl;J. Wecker;T. Matthée
用高分辨电子显微镜研究了YBa 2Cu 3 O 7-δ（YBCO）薄膜与Y稳定的ZrO 2（YSZ）和Y2 O3缓冲层的界面。在Si-YSZ界面处，发现4 nm厚的无定形二氧化硅层，由10 nm宽的结晶YSZ区域桥接。靠近这些区域的Si衬底包含平面{111}故障。在YSZ-Y2 O3界面处存在完全失配位错，Burgers矢量为1/2 <$110 <$。它们以分离的单个位错或分离的密集位错群的形式出现。在平面和原子尖锐的Y2 O3-YBCO界面处的原子配位可以被揭示。发现YBCO的第一原子层是Ba层。
The interfaces of YBa2Cu3O7−δ (YBCO) thin films grown on Si substrates with Y‐stabilized ZrO2 (YSZ) and Y2O3 buffer layers have been studied by high‐resolution electron microscopy. At the Si‐YSZ interfaces a 4‐nm‐thick amorphous silica layer is found, bridged by 10‐nm‐wide crystalline YSZ regions. Close to these regions the Si substrate contains planar {111} faults. At the YSZ‐Y2O3 interfaces perfect misfit dislocations are present, with Burgers vector 1/2〈110〉. They occur either as separated single dislocations or as separated groups of closely spaced dislocations. The atomic coordination at the planar and atomically sharp Y2O3‐YBCO interface could be revealed. The first atomic layer of the YBCO is found to be a Ba layer.