Reconfigurable quadruple quantum dots in a silicon nanowire transistor
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
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DOI：
10.1063/1.4950976
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发表时间：
2016-05-16
影响因子：
4
通讯作者：
Gonzalez-Zalba, M. F.
中科院分区：
文献类型：
--
作者：
Betz, A. C.;Tagliaferri, M. L. V.;Gonzalez-Zalba, M. F.
We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture. Published by AIP Publishing.
