Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC
Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC
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HPSI 4H-SiC 上的离子注入横向 p-i-n 二极管
DOI：
10.4028/www.scientific.net/msf.821-823.620
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
M. V. Rao
中科院分区：
文献类型：
--
作者：
R. Nipoti;F. Moscatelli;A. Roncaglia;F. Bonafè;F. Mancarella;P. de Nicola;A. Nath;M. V. Rao
通过 Al+ 和 P+ 离子注入分别获得阳极和阴极区域，在高纯度半绝缘 (HPSI) 4H-SiC 上制造方形环形横向 p+–i–n+ 二极管。所有二极管具有相同尺寸的中心阳极，其被本征区域包围，本征区域被环形阴极包围。所有二极管的阳极面积和环形阴极宽度都是固定的，只有本征区的横向长度变化。注入后退火在 1950 °C 下进行 10 分钟。静态正向和反向特性是在 30 - 290 °C 的温度范围内测量的。对于所有二极管，在 200 V、100 °C 条件下，反向电流均低于仪器检测极限 10-14 A，这是本研究中采用的最大反向偏压。对于 200 V 反向偏压，290 °C 时，反向电流增加至 108 A。一旦正向电流超过约 1.6 V 和 30 °C 的仪器检测极限，正向电流就会在低电压区域重叠。在所有测量温度下，正向电流遵循几乎相同的指数趋势，而对于给定的本征区域横向长度，二极管串联电阻随着阳极-阴极距离的增加而增加，并随着温度的增加而减小。
Square shaped annular lateral p+–i–n+ diodes on high purity semi-insulating (HPSI) 4H-SiC are fabricated by Al+ and P+ ion implantation to obtain anode and cathode regions, respectively. All the diodes have the same size central anode surrounded by an intrinsic region, which is surrounded by an annular cathode. Anode area and annular cathode width are fixed for all diodes, only the lateral length of the intrinsic region is varied. Post implantation annealing is performed at 1950 °C for 10 min. Static forward and reverse characteristics are measured in the temperature range of 30 - 290 °C. For all diodes, the reverse current is below the instrument detection limit of 10-14 A up to 100 °C at 200 V, the maximum reverse bias employed in this study. The reverse current increased up to low 108 A for 200 V reverse bias at 290 °C. Forward currents overlap at the low voltage region once they exceed the instrument detection limit at ~1.6 V and 30 °C. The forward currents follow almost identical exponential trend at all measured temperatures while the diode series resistance increase with increasing anode-cathode distance and decreased with increasing temperature for the given intrinsic region lateral length.