Polymer deposition and etching mechanisms in C2F6 radio‐frequency plasma as studied by laser‐induced fluorescence
Polymer deposition and etching mechanisms in C2F6 radio‐frequency plasma as studied by laser‐induced fluorescence
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激光诱导荧光研究 C2F6 射频等离子体中的聚合物沉积和蚀刻机制
DOI：
10.1116/1.584438
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发表时间：
1989
影响因子：
1.4
通讯作者：
T. Urisu
中科院分区：
文献类型：
--
作者：
M. Kitamura;H. Akiya;T. Urisu
用激光诱导荧光法测量了C2、F6射频等离子体中CF2浓度的空间分布。用CF2的生成和复合反应机理解释了观察到的谱线。结果表明，氟碳聚合物在SiO_2薄膜上的沉积速率与[CF2]_n成正比，n=2.5~3.0，而SiO_2的刻蚀速率与[CF2]成正比。蚀刻反应和沉积反应同时进行。在此基础上，分析了氟碳聚合物沉积和SiO_2刻蚀的反应机理。
Spatial profiles of CF2 concentration in C2 F6 rf plasma are measured by the laser‐induced fluorescence method. The observed profiles are explained by the generation and recombination reaction mechanisms of CF2 . It is found that the deposition rate of fluorocarbon polymer on SiO2 film is proportional to [CF2]n ; n=2.5–3.0, whereas the etch rate of SiO2 is proportional to [CF2]. Both the etching and the deposition reactions proceed at the same time. Based on these observations, reaction mechanisms for fluorocarbon polymer deposition and SiO2 etching are analyzed.