Gate-Activated Photoresponse in a Graphene p-n Junction
Gate-Activated Photoresponse in a Graphene p-n Junction
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DOI：
10.1021/nl2019068
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发表时间：
2011-10-01
期刊：
影响因子：
10.8
通讯作者：
Marcus, Charles M.
中科院分区：
文献类型：
--
作者：
Lemme, Max C.;Koppens, Frank H. L.;Marcus, Charles M.
我们研究光电探测石墨烯附近的局部静电门，这使得潜在的景观和载流子极性的主动控制。我们发现，一个强大的光响应只出现时，在那里形成一个p-n结，允许开关控制的光电探测。在p-n结附近产生的光电流不需要偏置，并且可以使用亚微米栅极来实现。局部调制的光响应使得基于石墨烯的光电探测器的新的应用范围成为可能，包括例如具有对亚波长尺寸的响应的控制的像素化红外成像。
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.