Highly Photosensitive Vertical Phototransistors Based on a Poly(3-hexylthiophene) and PbS Quantum Dot Layered Heterojunction
Highly Photosensitive Vertical Phototransistors Based on a Poly(3-hexylthiophene) and PbS Quantum Dot Layered Heterojunction
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基于聚（3-己基噻吩）和 PbS 量子点层状异质结的高光敏垂直光电晶体管
DOI：
10.1021/acsphotonics.6b00896
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发表时间：
--
期刊：
影响因子：
7
通讯作者：
Yao Jianquan
中科院分区：
文献类型：
--
作者：
Zhang Haiting;Zhang Yating;Song Xiaoxian;Yu Yu;Cao Mingxuan;Che Yongli;Zhang Zhang;Dai Haitao;Yang Junbo;Zhang Guizhong;Yao Jianquan
We fabricated a vertical field effect phototransistor with Au/Ag nanowires as the transparent source electrode and with vertically stacked layers of poly(3-hexylthiophene) (120 nm) and lead sulfide quantum dots (380 nm), which formed heterojunctions. The built-in electric field in the layered heterojunction aids the separation of photoinduced excitons, while the short channel enables efficient carrier transport across the active region. Both of these benefits enable a high photoperformance and fast photoresponse. This vertical phototransistor can be operated at room temperature with a low operation voltage of −1 V and is therefore energy-efficient. Further, it has a wide response spectrum from 400 to 2100 nm, a high photoresponsivity of more than 9 × 104AW–1, and a high detectivity of up to 2 × 1013Jones (cm Hz1/2W–1) under infrared illumination. Additionally, this vertical phototransistor had a response time of 9 ms, which is faster than a previously reported lateral field effect phototransistor based on poly(3-hexylthiophene)/lead sulfide quantum dots. The vertical architecture combined with the layered heterojunction approach provides a new, facile way of fabricating high performance devices.
