Kinetic effects of inclined magnetic field on physical sputtering by impurity ions
Kinetic effects of inclined magnetic field on physical sputtering by impurity ions
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DOI：
10.1016/j.jnucmat.2013.01.197
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发表时间：
2013-07
影响因子：
3.1
通讯作者：
G. Kawamura;Y. Tomita;A. Kirschner
中科院分区：
文献类型：
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作者：
G. Kawamura;Y. Tomita;A. Kirschner
溅射粒子通量所造成的等离子体面对的组件是一个必不可少的物理杂质输运代码。利用等离子体密度和温度等流体量，计算了入射粒子的速度分布，并计算了产额。利用粒子追踪程序和PIC（Particle-In-Cell）模拟程序计算的背景电场，研究了倾斜磁场对杂质离子入射角分布和溅射产额的影响。模拟了不同磁场角度和不同入射原子与靶原子组合的情况。磁场角度是提高产率最显著的参数。与表面法线的大角度导致3-5倍的产量，特别是在自溅射的情况下。在诸如碳对钨的小质量比的情况下，磁场的增强效果弱。
Sputtering caused by particle flux onto plasma-facing components is an essential physics for impurity transport codes. Velocity distribution of incident particles was obtained to calculate the yield from fluid quantities, i.e. plasma density and temperature. Effects of inclined magnetic field on incident angle distribution of impurity ions and sputtering yield were investigated with the aid of a particle tracing code with background electric field calculated by a PIC (Particle-In-Cell) simulation code. Simulations with various magnetic field angle and combination of projectile and target atoms were carried out. The most prominent parameter enhancing the yield is magnetic field angle. Large angle from the surface normal causes 3–5 times larger yield especially in the case of self sputtering. In the case of small mass ratio such as carbon on tungsten, the enhancement effect of the magnetic field is weak.