600V LPT-CSTBT™ on advanced thin wafer technology
600V LPT-CSTBT™ on advanced thin wafer technology
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DOI：
10.1109/ispsd.2011.5890792
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发表时间：
2011-05
期刊：
影响因子：
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通讯作者：
Y. Haraguchi;S. Honda;Kazunari Nakata;A. Narazaki;Y. Terasaki
中科院分区：
文献类型：
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作者：
Y. Haraguchi;S. Honda;Kazunari Nakata;A. Narazaki;Y. Terasaki
Electrical characteristics of the fabricated 600V class CSTBT™ with a Light Punch Through (LPT) structure on an advanced thin wafer technology are presented for the first time. The electrical characteristics of LPT-CSTBT are superior to the conventional Punch Through type (PT) one, especially in low current density regions because of the inherent lower built-in potential. Furthermore, we also have evaluated the effects of the mechanical stress on the device characteristics after soldering, utilizing a novel evaluation method with a very small size sub-chip layout. The results validate the proposed tool is useful to examine the influence of the mechanical stress on the electrical characteristics.
