Resistive memory effects in BiFeO3 single crystals controlled by transverse electric fields
Resistive memory effects in BiFeO3 single crystals controlled by transverse electric fields
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DOI：
10.1063/1.4947467
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发表时间：
2016-04
影响因子：
4
通讯作者：
S. Kawachi;H. Kuroe;T. Ito;A. Miyake;M. Tokunaga
中科院分区：
文献类型：
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作者：
S. Kawachi;H. Kuroe;T. Ito;A. Miyake;M. Tokunaga
通过磁化强度和电阻测量，研究了BiFeO_3单晶中垂直于三角晶胞c轴的电场效应。在外加电场作用下，磁化强度和电阻表现出滞后变化，这可以归因于磁电畴的重新取向。在室温下，通过改变外加电场的极性，样品可以在高阻态和低阻态之间重复切换。这些结果证明了BiFeO_3在非易失性存储器件中的应用潜力。
The effects of electric fields perpendicular to the c-axis of the trigonal cell in single crystals of BiFeO3 are investigated through magnetization and resistance measurements. Magnetization and resistance exhibit hysteretic changes under applied electric fields, which can be ascribed to the reorientation of the magnetoelectric domains. Samples are repetitively switched between high- and low-resistance states by changing the polarity of the applied electric fields over 20 000 cycles at room temperature. These results demonstrate the potential of BiFeO3 for use in non-volatile memory devices.