High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.
High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.
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基于通过卷对卷连续沉积工艺在金属带上外延生长的类单晶硅的高性能柔性薄膜晶体管。
DOI：
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发表时间：
2016
影响因子：
9.5
通讯作者：
V. Selvamanickam
中科院分区：
文献类型：
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作者：
Ying Gao;M. Asadirad;Yao Yao;P. Dutta;E. Galstyan;Shahab Shervin;K. Lee;S. Pouladi;Sicong Sun;Yongkuan Li;M. Rathi;J. Ryou;V. Selvamanickam
在可弯曲、可伸缩的衬底上直接沉积类单晶硅(Si)薄膜是制作高性能、高性价比柔性电子器件的良好材料平台。然而，由于半导体层的厚度和无意中的高掺杂，晶体管的运行受到了阻碍。我们首次展示了使用类单晶硅薄膜的高性能柔性薄膜晶体管(TFT)，其场效应迁移率为∼200cm2/V·S，饱和电流I/LW>；50μA/μm，这比传统的柔性薄膜晶体管的器件特性高出一个数量级。用“籽晶外延”技术在金属带上生长的(001)晶面的Si薄膜，经X射线衍射、拉曼光谱、反射高能电子衍射和透射电子显微镜表征，显示出接近单晶的性质。柔性高性能SiTFT的实现为柔性电子产品的扩展应用开辟了一条新的途径，例如放大和数字电路，而不是目前占主导地位的显示开关。
Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm2/V·s and saturation current, I/lW > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.