Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method
Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method
复制标题
低温光化学溶液沉积法制备非晶InGaZnO薄膜的高度均匀阻变特性
DOI：
10.1021/am500048y
复制
发表时间：
2014-04-09
影响因子：
9.5
通讯作者：
Bao, Dinghua
中科院分区：
文献类型：
--
作者：
Hu, Wei;Zou, Lilan;Bao, Dinghua
报道了非晶InGaZnO（a-IGZO）薄膜的高均匀阻变特性。该薄膜是通过低温光化学溶液沉积方法制备的，该方法结合了化学溶液沉积和紫外（UV）照射处理。基于a-IGZO的阻变器件表现出长的保持力、良好的耐久性、均匀的开关电压以及低阻态和高阻态的稳定分布。根据电流电压特性和温度依赖性讨论了其导电机理。基于傅立叶变换红外光谱、X射线光电子能谱和场发射扫描电子显微镜对薄膜的分析，优异的阻变特性可以归因于有机和氢基元素的减少以及通过UV照射形成的氢键增强的金属-氧化物键合和金属-氢氧化物键合网络。研究表明，a-IGZO薄膜在阻变存储器中具有潜在的应用前景，如果将a-IGZO阻变单元与a-IGZO薄膜晶体管集成，低温光化学溶液沉积方法可以为进一步实现板上系统应用找到机会。
We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.