Diamond nanoseeding on silicon:: Stability under H2 MPCVD exposures and early stages of growth
Diamond nanoseeding on silicon:: Stability under H2 MPCVD exposures and early stages of growth
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DOI：
10.1016/j.diamond.2008.01.008
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发表时间：
2008-07-01
影响因子：
4.1
通讯作者：
Osawa, E.
中科院分区：
文献类型：
--
作者：
Arnault, J. C.;Saada, S.;Osawa, E.
分散在硅表面的爆轰纳米金刚石经历了不同的H-2 MPCVD暴露。用XPS和XEELS对表面诱导的变化进行了原位表征。然后，采用较短的CH4/H-2生长步骤。这一系列研究表明，爆轰纳米金刚石具有极好的稳定性。即使在强H-2等离子体下，SP(3)的刻蚀速率也不足以去除纳米金刚石。H-2暴露可以在不改变sp(3)种子的情况下成功地去除C-C sp(2)碳。此外，氢处理后观察到的碳化硅的形成被认为有助于提高纳米金刚石颗粒在衬底上的附着力。(C)2008爱思唯尔B.V.保留所有权利。
Detonation nanodiamond dispersed on silicon surfaces underwent different H-2 MPCVD exposures. The induced changes at the surface have been characterized in situ by XPS and XEELS. Then, a short CH4/H-2 growth step was applied. This sequential study revealed an excellent stability of detonation nanodiamond. The sp(3) etching rate is insufficient to remove nanodiamond even under intense H-2 plasma. The H-2 exposure could be successfully used to remove C-C sp(2) carbon without altering sp(3) seeds. Moreover, the formation of silicon carbide observed after the hydrogen treatment is thought to be helpful to enhance the adhesion of nanodiamond particles on the substrate. (C) 2008 Elsevier B.V. All rights reserved.