Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing
Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing
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DOI：
10.7567/jjap.52.125001
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发表时间：
2013-12-01
影响因子：
1.5
通讯作者：
Arakawa, Yasuhiko
中科院分区：
文献类型：
--
作者：
Harbord, Edmund;Ota, Yasutomo;Arakawa, Yasuhiko
我们测量了两个样品中数十个单个 InAs/GaAs 量子点 (QD) 中激子复合物在各种能量范围内的偏振分辨光致发光：一个是生长的，另一个是经过快速热退火 (RTA) 的。将 X+ 发射的线性偏振作为价带混合 (VBM) 的探针，我们发现 RTA 增强了 QD VBM，这归因于 QD 高度的增加。我们用 8 波段 k 补充我们的测量。 p 计算表明，退火时高度的增加是造成这种增强的原因。 (C) 2013 日本应用物理学会
We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). thing the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k . p calculations, which suggest the increase in height on annealing is responsible for this enhancement. (C) 2013 The Japan Society of Applied Physics