Electrical characterization of ZnO nanorods
Electrical characterization of ZnO nanorods
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DOI：
10.1002/pssb.200675111
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发表时间：
2007-05-01
影响因子：
1.6
通讯作者：
Waag, A.
中科院分区：
文献类型：
--
作者：
Schlenker, E.;Bakin, A.;Waag, A.
氧化锌（ZnO）纳米棒生长的湿化学方法和气相传输。为了探索单个纳米结构的电流-电压（I-V）特性，通过使用具有导电尖端的原子力显微镜（AFM）或通过将纳米棒从生长衬底分离，将它们转移到隔离衬底并使它们与通过电子束光刻图案化的蒸发的Ti/Au电极接触来获得。AFM方法仅产生肖特基二极管行为，而Ti/Au与ZnO形成欧姆接触。对于后一种方法，获得的I-V曲线显示纳米棒的电阻率在10（-5）Ω cm的量级，这对于未掺杂的ZnO是异常低的。因此，我们假设存在一个高导电性的表面通道。(c)2007 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron-beam lithography. The AFM-approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I-V curves reveal a resistivity of the nanorods in the order of 10(-5) Omega cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.