Epitaxial growth and characterization of Ge(1-x-y)Sn(x)Pb(y )ternary alloys
Epitaxial growth and characterization of Ge(1-x-y)Sn(x)Pb(y )ternary alloys
复制标题
Ge(1-x-y)Sn(x)Pb(y)三元合金的外延生长及表征
DOI：
10.1016/j.jallcom.2020.154505
复制
发表时间：
2020
影响因子：
6.2
通讯作者：
Cheng Buwen
中科院分区：
文献类型：
--
作者：
Liu Xiangquan;Zheng Jun;Li Mingming;Peng Linzhi;Wang Nan;Li Xiuli;Zuo Yuhua;Liu Zhi;Xue Chunlai;Cheng Buwen
采用溅射外延法在Ge/Si（100）衬底上生长单晶ge1 -x- ysnxpyyalloy。通过透射电镜观察发现，高质量合金中未出现锡、铅偏析现象。最大Pb含量为1.7%，表明Sn和Pb的共引入是提高Ge基体中Pb含量的可行策略。Ge1-x-ySnxPby（x < 0.081, y < 0.017）合金的热稳定性表明，表面偏析的临界温度不仅受Pb含量的影响，还受Sn含量的影响。通过吸收系数的拟合计算了ge1 -x- ysnxpyy合金的直接带隙，理论预测表明该合金在高效硅基光电器件中具有很大的应用潜力。
Single crystalline Ge1-x-ySnxPbyalloys were grown on Ge/Si(100) substrates by a sputtering epitaxy method. Cross-sectional transmission electron microscopy revealed that no segregation of Sn and Pb occurred in these high quality alloys. The maximum Pb content of 1.7% was achieved, indicating that the co-introduction of Sn and Pb was a viable strategy to increase the Pb content in the Ge matrix. The thermal stability of the Ge1-x-ySnxPby(x < 0.081, y < 0.017) alloys revealed that the critical temperature for surface segregation was affected by not only the Pb content but also the Sn content. The direct bandgaps of the Ge1-x-ySnxPbyalloys were calculated by the fitting of the absorption coefficient and the theoretical prediction indicated that the alloys have great potential for the application in efficient silicon-based optoelectronic devices.