Emissivity of liquid silicon in visible and infrared regions
Emissivity of liquid silicon in visible and infrared regions
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DOI：
10.1063/1.364418
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发表时间：
1997-05
影响因子：
3.2
通讯作者：
E. Takasuka;E. Tokizaki;K. Terashima;S. Kimura
中科院分区：
文献类型：
--
作者：
E. Takasuka;E. Tokizaki;K. Terashima;S. Kimura
通过直接测量熔体和熔体附近的黑体空腔的热辐射，确定了硅熔体在可见光和红外区的法向光谱发射率。光谱发射率随波长的增加略有下降。发射率随温度略有变化。在可见光区和红外区的光谱发射率值分别为0.27和0.21。发射率的波长依赖性可以通过熔体中自由电子的介电响应来解释。
Normal spectral emissivity of Si melt in visible and infrared regions was determined by the direct measurement of thermal radiations from the melt and a blackbody cavity which was located close to the melt. The spectral emissivity slightly decreases with wavelength. The emissivity slightly changes with temperature. The spectral emissivity values in visible and in infrared region are 0.27 and 0.21, respectively. The wavelength dependence of the emissivity can be interpreted by a dielectric response of free electrons in the melt.