An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader
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DOI：
10.1109/led.2018.2884918
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发表时间：
2019-02
影响因子：
4.9
通讯作者：
T. Ohki;A. Yamada;Y. Minoura;K. Makiyama;J. Kotani;S. Ozaki;Masaru Sato;N. Okamoto;K. Joshin;N. Nakamura
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文献类型：
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作者：
T. Ohki;A. Yamada;Y. Minoura;K. Makiyama;J. Kotani;S. Ozaki;Masaru Sato;N. Okamoto;K. Joshin;N. Nakamura
这封信报道了采用SiC/金刚石键合散热器的InAlGaN/GaN高电子迁移率晶体管（HEMT），具有创纪录的高输出功率密度22.3 W/mm。四元In添加InAlGaN阻挡层实现了超过1 A/mm的大电流和257 V的高击穿电压。S带负载牵引测量的漏极偏置高达100 V，导致高功率操作。此外，通过采用SiC/金刚石散热器，热阻降低了60%，从18.8到7.2°C/W。在负载牵引测量的输出功率密度中清楚地观察到这种大的散热效应。我们的研究结果表明，GaN HEMT与In添加的势垒层是有前途的，不仅为毫米波的应用，但也为高输出功率微波放大器。
This letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power density of 22.3 W/mm. A quaternary In-added InAlGaN barrier enabled both the large current of over 1 A/mm and the high breakdown voltage of 257 V. The drain bias was increased as high as 100 V for the S-band load-pull measurement, leading to high power operation. Furthermore, the thermal resistance was reduced by 60%, from 18.8 to 7.2°C/W, by employing the SiC/diamond heat spreader. This large heat dissipation effect was clearly observed in the output power density for the load-pull measurement. Our results demonstrate that the GaN HEMT with an In-added barrier layer is promising not only for millimeter-wave applications but also for high output power microwave amplifiers.