Ultra-low temperature epitaxial growth of lithium ferrite thin films by high-pressure sputtering
Ultra-low temperature epitaxial growth of lithium ferrite thin films by high-pressure sputtering
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DOI：
10.1039/c5ce01477h
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发表时间：
2015-10
期刊：
影响因子：
3.1
通讯作者：
Ruyi Zhang;Ming Liu;Lu Lu-Lu;S. Mi;Hong Wang
中科院分区：
文献类型：
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作者：
Ruyi Zhang;Ming Liu;Lu Lu-Lu;S. Mi;Hong Wang
LiFe5O8 epitaxial thin films with high crystalline quality have been successfully synthesized on (001) MgAl2O4 substrates even at an ultra-low working temperature of 200 °C by using a high-pressure radio-frequency sputtering system. Better crystalline qualities of the epitaxial LiFe5O8 films can be obtained with an increase of the deposition temperature in the range from 200 °C to 800 °C. Moreover, the growth temperature can significantly affect the magnetic properties of the LiFe5O8 thin films. The strain states, crystalline quality and defect density should be the main causes for the tunable magnetic properties. Overall, the wide-temperature range processing window, especially the low deposition temperature of 200 °C, of the LiFe5O8 films by this method will offer flexibilities for direct integration with semiconductors, organic electronics, flexible electronic materials and other related elements which are sensitive to the processing temperature.
