Direct Measurements of Free Crystal Growth in Deeply Undercooled Melts of Semiconducting Materials.
Direct Measurements of Free Crystal Growth in Deeply Undercooled Melts of Semiconducting Materials.
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DOI：
10.1103/physrevlett.77.1801
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发表时间：
1996-08
影响因子：
8.6
通讯作者：
Li;Herlach
中科院分区：
文献类型：
--
作者：
Li;Herlach
在无容器状态下对半导体纯Ge和稀Ge基系统的体熔体进行了处理。自由晶体生长速度已被直接测量为过冷度的函数。在目前的枝晶生长理论的分析允许识别的生长模式，无论是沿边或连续的，取决于过冷度和Sn浓度。添加少量的Sn到Ge导致生长速度的大幅提高。在晶体生长理论中，这种行为被解释为固液界面从多面到粗糙界面的连续变化。
Bulk melts of semiconducting pure Ge and dilute Ge-based systems were processed in a containerless state. Velocities of free crystal growth have been measured directly as a function of undercooling. The analysis within current theories of dendrite growth allows the identification of the growth mode, either edgewise or continuous, depending on undercooling and Sn concentration. The addition of small amounts of Sn to Ge leads to a substantial enhancement of the growth velocity. This behavior is interpreted within crystal-growth theory by a continuous change of the solid-liquid interface from a faceted to a rough interface.