Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices
Superlattice Phase Change Memory Fabrication Process for Back End of Line Devices
复制标题
DOI：
10.7567/jjap.52.05ff01
复制
发表时间：
2013-05-01
影响因子：
1.5
通讯作者：
Tominaga, Junji
中科院分区：
文献类型：
--
作者：
Ohyanagi, Takasumi;Takaura, Norikatsu;Tominaga, Junji
研究了以Sb2Te3/GeTe周期性薄膜层作为相变存储器的超晶格薄膜在晶体相中的沉积。我们在溅射温度为200℃的条件下成功制备了该超晶格结构，并用HBr/Ar气体混合物干蚀刻了尺寸为70 nm的柱状结构。(c) 2013日本应用物理学会
The superlattice film with the periodical thin film layers of Sb2Te3/GeTe used as a phase change memory was studied for deposition in the crystal phase. We successfully fabricated the superlattice structure with the sputtering temperature of 200 degrees C. Moreover, the pillar structure with the size of 70 nm was dry-etched using a HBr/Ar gas mixture. (c) 2013 The Japan Society of Applied Physics