Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
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DOI：
10.1149/1.1805502
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发表时间：
2004-11
影响因子：
--
通讯作者：
J. Lim;S. Yun;J. Lee
中科院分区：
文献类型：
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作者：
J. Lim;S. Yun;J. Lee
采用等离子体增强原子层沉积（ALD）技术，首次在250℃条件下制备了高质量的二氧化钛薄膜。与传统ALD制备的薄膜相比，该薄膜的均匀性提高了3%，生长速率为0.042 nm/循环，电学性能得到改善，包括介电常数和泄漏电流。特别是等离子体过程通过生成新的活性官能团提高了前驱体在初始生长阶段的吸附速率，抑制了表面粗化。
High-quality TiO 2 films were grown at 250°C by plasma-enhanced atomic layer deposition (ALD) with a mixture of O 2 and N 2 plasma for the first time. The films exhibited an improved uniformity of within ′3%, a reliable growth rate of 0.042 nm/cycle, and improved electrical properties, including dielectric constant and leakage current compared to those prepared by conventional ALD. In particular, the plasma process enhanced the rate of adsorption of precursors during the initial growth stage by generating new active functional groups and the surface roughening was suppressed.