Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes
Low Temperature Synthesis of Extremely Dense and Vertically Aligned Single-Walled Carbon Nanotubes
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DOI：
10.1143/jjap.44.1558
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发表时间：
2005-04
影响因子：
1.5
通讯作者：
Guofang Zhong;T. Iwasaki;K. Honda;Y. Furukawa;I. Ohdomari;H. Kawarada
中科院分区：
文献类型：
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作者：
Guofang Zhong;T. Iwasaki;K. Honda;Y. Furukawa;I. Ohdomari;H. Kawarada
采用一种新型的点弧微波等离子体化学气相沉积（CVD）装置，利用传统高频溅射技术，在Si衬底上涂覆0.7 nm Al2O3（顶部）/0.5 nm Fe/ 5-70 nm Al2O3的三明治状纳米层结构，生长出单壁碳纳米管。首次在低至600℃的温度下，以270µm/h的生长速率在40 min内生长出密度极高且垂直排列的swnt。生长的SWNT薄膜的体积密度高达66 kg/m3。
A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al2O3 (top)/0.5 nm Fe/5–70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 µm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66 kg/m3.