Au-Induced Low-Temperature (∼250°C) Crystallization of Si on Insulator Through Layer-Exchange Process
Au-Induced Low-Temperature (∼250°C) Crystallization of Si on Insulator Through Layer-Exchange Process
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DOI：
10.1149/1.3562275
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发表时间：
2011-06
影响因子：
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通讯作者：
J. Park;M. Kurosawa;Naoyuki Kawabata;M. Miyao;T. Sadoh
中科院分区：
文献类型：
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作者：
J. Park;M. Kurosawa;Naoyuki Kawabata;M. Miyao;T. Sadoh
研究了在低温（~ 250 ℃）下通过层交换工艺在绝缘体上实现Au诱导的Si晶化。通过对形成在绝缘体上的非晶Si（a-Si）/Au堆叠结构进行退火（250-350 ℃），将Si/Au层的位置反转，获得Au/poly-Si堆叠结构。这种Au诱导的层交换生长技术在低温（~ 250 ℃）下可以在柔性衬底上获得多晶硅薄膜，并将其作为模板层生长高质量的Si 1-xGex（x：0-1）薄膜，以实现柔性高速薄膜晶体管和柔性高效太阳能电池。
Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼ 250 C). By annealing (250–350 C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼ 250 C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si 1–x Ge x (x: 0–1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.