Single pulse short-circuit robustness and repetitive stress aging of GaN GITs
Single pulse short-circuit robustness and repetitive stress aging of GaN GITs
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GaN GIT 的单脉冲短路鲁棒性和重复应力老化
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
M. Pfost
中科院分区：
文献类型：
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作者：
A. Castellazzi;A. Fayyaz;Siwei Zhu;T. Oeder;M. Pfost
短路承受能力是半导体功率器件在牵引、可再生能源和配电等许多战略应用领域的关键要求。事实上，尽管显然是一种非故意的操作模式，但分类电路仍然可能是相对频繁的事件。由于其相关的相当大的电热应力水平，在广泛部署新的器件技术之前，必须对重复应力导致的单脉冲承受能力和器件老化进行彻底分析。本文重点介绍了最新一代额定电压为600V的商用栅注入型GaN晶体管。在电热器件耦合模型的支持下，结合器件的功能和结构特征，进行了广泛的实验分析，提出了对潜在退化和失效机制的解释。这些发现突出了一种特定类型的p-栅GaN HEMT，即栅极注入晶体管(Git)，对短路应力具有显著的稳健性，使其成为相关电压类别中潜在的非常有吸引力和竞争力的技术。
Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a non-intentional operational mode, sort-circuit can be nonetheless a relatively frequent event. Due to its associated considerable electro-thermal stress levels, a thorough analysis of both single pulse withstand capability and device aging as a result of repetitive stress are mandatory before widespread deployment of new device technologies. In this paper, the focus is on latest generation commercial gate-injection GaN transistors, in the 600 V rating class. Extensive experimental analysis is presented, putting forward an interpretation of the underlying degradation and failure mechanisms, supported by coupled electro-thermal device models, incorporating both the functional and structural characteristics of the devices. The findings highlight a remarkable robustness of a specific type of p-gate GaN HEMTs, referred to as gate injection transistors (GITs), against short-circuit stress, making them a potentially very attractive and competitive technology in the voltage class of relevance.