Modeling of terahertz radiation from biased photoconductors: transient velocity effects.
Modeling of terahertz radiation from biased photoconductors: transient velocity effects.
复制标题
来自偏置光电导体的太赫兹辐射建模：瞬态速度效应。
DOI：
10.1364/ol.19.001994
复制
发表时间：
1994
期刊：
影响因子：
3.6
通讯作者：
A. Taylor
中科院分区：
文献类型：
--
作者：
G. Rodriguez;S. R. Caceres;A. Taylor
我们在一个模型中考虑了瞬时载流子速度动力学，该模型描述了由超短光脉冲触发的大口径、偏置光导体的太赫兹辐射。计算了辐射电场的波形作为光激发通量和偏置电场的函数。将该模型应用于偏压GaAs光导体中的太赫兹产生。
We include transient carrier velocity dynamics in a model describing the terahertz radiation from a large-aperture, biased photoconductor triggered by an ultrashort optical pulse. Waveforms of the radiated electric field are calculated as a function of optical excitation fluence and bias field. The model is applied to terahertz generation in biased GaAs photoconductors.