Designing a 40.68 MHz power-combining resonant inverter with eGaN FETs for plasma generation
Designing a 40.68 MHz power-combining resonant inverter with eGaN FETs for plasma generation
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设计用于等离子体生成的具有 eGaN FET 的 40.68 MHz 功率组合谐振逆变器
DOI：
10.1109/ecce.2018.8557680
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
J. Rivas
中科院分区：
文献类型：
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作者：
Jungwon Choi;Yasuyuki Ooue;Naoki Furukawa;J. Rivas
本文介绍了一种40.68 MHz，1.2 kW的功率合成谐振逆变器的设计，采用埃根场效应管的等离子体产生。在甚高频（VHF）下操作允许使用较小的无源元件，并且具有提高用于等离子体应用的RF功率放大器的功率密度的潜力。为了在40.68 MHz开关频率下提供高功率，选择了具有宽带隙（WBG）器件（例如埃根FET）的$\Phi {2}$类逆变器拓扑。在谐振逆变器中使用WBG器件有助于我们提高开关频率，同时提供比硅器件相对更高的效率。与使用具有大导通电阻和输入电容的RF FET相比，使用具有较低导通电阻和输入电容的埃根FET导致谐振逆变器的相对较高的效率。然而，这些FET在高功率工作时不能有效地在VHF下散热。为了减少每个埃根FET的损耗，我们设计并实现了基于$\Phi_{2}$类逆变器的功率合成逆变器，在40.68 MHz下提供1.2 kW的输出功率。单级$\Phi_{2}$逆变器的调谐方法使我们能够轻松地将四个逆变器并联连接，从而创建功率组合逆变器，以增加输出功率。此外，所提出的逆变器拓扑结构降低了每个开关器件的功率损耗，从而可以减小散热器的尺寸。这项研究表明，使用埃根场效应管的功率合成谐振逆变器可以提高效率和功率密度，同时在40.68 MHz工作。
This paper presents the design of a 40.68 MHz, 1.2 kW power-combining resonant inverter using eGaN FETs for plasma generation. Operating at very high frequency (VHF) allows the use of smaller passive components and has the potential to improve the power density of an RF power amplifier for plasma applications. To provide high power at 40.68 MHz switching frequency, a class $\Phi_{2}$ inverter topology with wide band gap (WBG) devices such as eGaN FETs was selected. Using WBG devices in resonant inverters helps us increase switching frequencies while providing relatively higher efficiency compared to silicon devices. In contrast to using RF MOSFETS with large on-resistance and input capacitance, using eGaN FETs with lower on-resistance and input capacitance results in relatively higher efficiency of resonant inverters. However, these FETs in high-power operation cannot effectively dissipate heat at VHF. To reduce the losses in each eGaN FET, we designed and implemented the power-combining inverter based on a class $\Phi_{2}$ inverter to provide 1.2 kW output power at 40.68 MHz. The tuning method of a single class $\Phi_{2}$ inverter enables us to easily connect four inverters in parallel, creating a power-combining inverter that increases the output power. Also, the proposed inverter topology reduces the power loss in each switching device, which can decrease the size of the heat sink. This study demonstrates that power-combining resonant inverters using eGaN FETs can increase efficiency and power density while operating at 40.68 MHz.