ELECTRIC BREAKDOWN IN IONIC CRYSTALS
ELECTRIC BREAKDOWN IN IONIC CRYSTALS
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DOI：
10.1103/physrev.76.1394
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发表时间：
1949-01-01
期刊：
影响因子：
--
通讯作者：
CALLEN, HB
中科院分区：
文献类型：
--
作者：
CALLEN, HB
离子晶体在低温和中温下的电击穿强度是根据冯希佩尔低能准则计算的。采用 Fröhlich 的计算方法，并进行修改以考虑离子的电子极化率。 T= 0 时的击穿强度为 F 0 (volts cm)= 134× 10 6 (ℏ ω t) ev [(ε s− ε 0)(ε s ε 0 3) 1 2](m* m) 其中 (ℏ ω t) ev 是以电子伏特为单位的剩余斯特拉尔能量，ε s 和 ε 0 是介电常数的静态值和光学值，并且m* m 是有效质量与自由电子质量的比率。击穿强度随着温度的升高而缓慢增加。定性地解释了击穿对晶体取向的依赖性的缺乏以及击穿路径的强方向依赖性。
The electric breakdown strength of ionic crystals at low and moderate temperatures is calculated on the basis of von Hippel's low energy criterion. Fröhlich's method of calculation, modified to take account of the electronic polarizability of the ions, is employed. The breakdown strength at T= 0 is F 0 (volts cm)= 134× 10 6 (ℏ ω t) ev [(ε s− ε 0)(ε s ε 0 3) 1 2](m* m) where (ℏ ω t) ev is the reststrahl energy in electron volts, ε s and ε 0 are the static and optical values of the dielectric constant, and m* m is the ratio of the effective mass to the free electron mass. The breakdown strength increases slowly with increasing temperature. The lack of dependence of the breakdown on crystallographic orientation and the strong directional dependence of the breakdown paths are qualitatively accounted for.