Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors
Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors
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DOI：
10.1063/1.1792377
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发表时间：
2004-09-13
影响因子：
4
通讯作者：
Ogawara, O
中科院分区：
文献类型：
--
作者：
Otsuji, T;Hanabe, M;Ogawara, O
我们已经观察到的等离子体共振强度在太赫兹范围内的短栅长InGaP/InGaAs/GaAs赝晶高电子迁移率晶体管的频率依赖性。等离子体共振激发是利用混光激光束的差频成分通过带间光激发进行的。在足够的二维传导电子密度（> 10（12）cm（-2））和适度的调制指数（光激发电子密度与二维电子初始密度之比）下，我们在室温下清晰地观察到了1.9和5.8 THz的等离子体共振峰，对应于基频和三次谐波共振，这与理论符合得很好。(C)2004年，美国物理学会。
We have observed the frequency dependence of the plasma resonant intensity in the terahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beam. Under sufficient density of two-dimensional (2D) conduction electrons (>10(12) cm(-2)) and a moderate modulation index (the ratio of the density of photoexcited electrons to the initial density of the 2D electrons) we clearly observed the plasma-resonant peaks at 1.9 and 5.8 THz corresponding to the fundamental and third-harmonic resonance at room temperature, which is in good agreement with theory. (C) 2004 American Institute of Physics.