Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga 2 O 3 Heterojunction Rectifiers and Ni/Au/Ga 2 O 3 Schottky Rectifiers
Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga 2 O 3 Heterojunction Rectifiers and Ni/Au/Ga 2 O 3 Schottky Rectifiers
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10 MeV中子辐照对NiO/Ga 2 O 3 异质结整流器和Ni/Au/Ga 2 O 3 肖特基整流器效果的比较
DOI：
10.1149/2162-8777/ace54e
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发表时间：
2023
影响因子：
2.2
通讯作者：
Pearton, S. J.
中科院分区：
文献类型：
--
作者：
Li, Jian-Sian;Xia, Xinyi;Chiang, Chao-Ching;Wan, Hsiao-Hsuan;Ren, Fan;Kim, Jihyun;Pearton, S. J.
通过电荷交换 9 Be (p; n i) 9 Be 反应产生的中子，能量范围为 0–33 MeV，平均能量为～ 9.8 MeV，用于照射传统肖特基 Ga 2 O 3 整流器和 NiO/Ga 2 O 3 pn 异质结整流器，注量为 1.1–2.2× 10 14 cm− 2。肖特基整流器的电压在辐照后得到改善，但 NiO/Ga 2 O 3 对应物的电压大幅下降。这可能是氧化镍内缺陷区域扩大的结果。辐照后，开关特性下降，两种类型的辐照样品都无法承受高于 0.7 A 或 400 V 的开关，而参考样品对于 1 A 和 1 kV 具有鲁棒性。两种类型器件的载流子去除率均为∼ 45 cm−1。中子辐照仅略微降低了正向电流和通态电阻。
Neutrons generated through charge-exchange 9 Be (p; n i) 9 Be reactions, with energies ranging from 0–33 MeV and an average energy of∼ 9.8 MeV were used to irradiate conventional Schottky Ga 2 O 3 rectifiers and NiO/Ga 2 O 3 pn heterojunction rectifiers to fluences of 1.1–2.2× 10 14 cm− 2. The breakdown voltage was improved after irradiation for the Schottky rectifiers but was highly degraded for their NiO/Ga 2 O 3 counterparts. This may be a result of extended defect zones within the NiO. After irradiation, the switching characteristics were degraded and irradiated samples of both types could not survive switching above 0.7 A or 400 V, whereas reference samples were robust to 1 A and 1 kV. The carrier removal rate in both types of devices was∼ 45 cm− 1. The forward currents and on-state resistances were only slightly degraded by neutron irradiation.