Bright Quantum Dot Light-Emitting Diodes Enabled by Imprinted Speckle Image Holography Nanostructures
Bright Quantum Dot Light-Emitting Diodes Enabled by Imprinted Speckle Image Holography Nanostructures
复制标题
由压印散斑图像全息纳米结构实现的明亮量子点发光二极管
DOI：
10.1021/acs.jpclett.9b00499
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发表时间：
2019-05-02
影响因子：
5.7
通讯作者：
Dong, Yajie
中科院分区：
文献类型：
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作者：
Chen, Hao;He, Ziqian;Dong, Yajie
通过在器件内部压印散斑全息结构，实现了具有倒置结构的超亮全溶液处理量子点发光二极管。具有压印随机光栅结构的QLED在8 V的驱动电压下可以达到高达146 000 Cd/m（2）的亮度，这是具有平面结构的对照器件的亮度值的1.76倍，创下了所有溶液处理的倒置红色QLED的新亮度记录。具有印迹结构的QLED的发光功率效率和外量子效率分别是对照器件的1.8倍和1.65倍。进一步的光学模拟结果表明，该结构不仅可以帮助提取被捕获的内部光子能量，而且压印过程中的机械压力在提高器件性能方面起着至关重要的作用。
Super-bright all-solution-processed quantum dot light-emitting diodes (QLEDs) with an inverted structure are achieved by imprinting speckle image holography (SIH) structures inside the devices. QLEDs with imprinted random grating structures can reach a luminance of up to 146 000 Cd/m(2) at driving voltage of 8 V, which is 1.76 times higher than the value of control devices with planar architecture, setting a new brightness record for all solution -processed inverted red QLEDs. The luminous power efficiency and external quantum efficiency of the QLEDs with imprinted structures are 1.8 and 1.65 times higher to those of the control devices, respectively. Further optical simulation results reveal that not only can the structure help extract the trapped internal photon energy but also the mechanical pressure during the imprinting process plays a crucial role in improving the device performance.