A charge sensor integration to tunable double quantum dots on two neighboring InAs nanowires
A charge sensor integration to tunable double quantum dots on two neighboring InAs nanowires
复制标题
电荷传感器集成到两个相邻 InAs 纳米线上的可调谐双量子点
作者：
Xuming Wang;Shaoyun Huang;Ji-Yin Wang;Dong Pan;Jianhua Zhao;H. Q. Xu
在两个相邻的纯相InAs纳米线上使用局部顶指栅技术将单个量子点作为电荷传感器集成到可扩展的双量子点中。单点on.one线电容器通过金属桥栅耦合另一个纳米线上的双点之一。该传感器可以精确地监测双量子点的电荷占据态，即使在少电子区，通过双量子点的传输隧穿电流消失。在双点隧穿光谱中，电子的点间隧穿过程是不存在的，但它可以用传感器在两个最近的三重点之间的一条直线来表示。因此，从可检测的电荷跃迁定量地提取双点之间的隧道耦合强度。在InAs纳米线上集成电荷传感器的高度可调谐多量子点可能是量子信息处理技术的重要组成部分。
A single quantum dot serving as a charge sensor is integrated to scalable double quantum dots using.local top finger-gate techniques on two neighboring pure-phase InAs nanowires. The single dot built on.one nanowire capacitively couples one of the double dots constructed on another nanowire via a metal.bridge gate. The charge occupation states of double quantum dots can be accurately monitored by the.sensor even in a few-electron regime in which transport tunneling current through the double dots.vanishes. In the tunneling spectroscopy of double dots, electron inter dot tunneling process is absent;.however, it can be illustrated by the sensor in terms of a transconductance line between the two closest.triple points. Thus, tunnel coupling strength between the double dots is quantitatively extracted from the.detectable charge transition. The highly tunable multiple quantum dots with integrated charge sensors on.InAs nanowires could be an essential building block for quantum information processing technology.