Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing
Unitraveling-Carrier-Photodiode-Integrated High-Electron-Mobility Transistor for Photonic Double-Mixing
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DOI：
10.1109/jlt.2021.3060795
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发表时间：
2021-02
影响因子：
4.7
通讯作者：
A. Satou;Y. Omori;Kazuki Nishimura;T. Hosotani;K. Iwatsuki;T. Suemitsu;T. Otsuji
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文献类型：
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作者：
A. Satou;Y. Omori;Kazuki Nishimura;T. Hosotani;K. Iwatsuki;T. Suemitsu;T. Otsuji
我们新提出并实验研究了一种InGaAs沟道高电子迁移率晶体管，该晶体管在其源极侧集成了一个untraveling-carrier photodiode（UTC-PD）结构，用于利用其光子双混频功能进行有效的光到无线载波频率下变频。结果表明，由于UTC-PD结构的集成，与标准HEMT相比，双混频转换增益显著提高了20 dB。通过测量毫米波区的直流特性和光混频/双混频特性，证实了器件结构预期的器件工作原理。该设备在未来的光无线融合网络中实际使用的可行性。
We newly propose and experimentally investigate an InGaAs-channel high-electron-mobility transistor integrated with a unitraveling-carrier photodiode (UTC-PD) structure on its source side for an efficient optical-to-wireless carrier frequency downconversion utilizing its photonic double-mixing functionality. It is demonstrated that the double-mixing conversion gain is significantly enhanced by 20 dB compared with a standard HEMT, owing to the integration of the UTC-PD structure. The device operation principle expected from the device structure is confirmed through measured DC characteristics and photomixing/double-mixing characteristics in the millimeter-wave region. The feasibility of the device for practical use in future optical-wireless convergence networks is addressed.