3D silicon detectors - status and applications

3D silicon detectors - status and applications
复制标题

DOI：
10.1016/j.nima.2005.04.037
复制
发表时间：
2005-09-01
期刊：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
影响因子：
1.4
通讯作者：
Parker, S
Parker, S
中科院分区：
物理与天体物理3区
文献类型：
--
作者：
DaVia, C;Hasi, J;Parker, S

文献摘要

被引文献

相似文献

三维硅技术是利用微电子机械系统(MEMS)工艺制造硅探测器的一种新方法。在这种创新的设计中，电极垂直于表面穿透硅体。已经开发了两种类型的设备-3D和平面3D。两者都使用边缘电极，消除了对保护环的需要，并提供了对边缘几微米范围内的灵敏度。对3D技术及其优点进行了综述，并给出了这两种器件的实例。(C)2005 Elsevier B.V.保留所有权利。
3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed-3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown. (c) 2005 Elsevier B.V. All rights reserved.