Investigation of low-temperature excitonic and defect emission from Ni-doped ZnO nanoneedles and V-doped ZnO nanostructured film
Investigation of low-temperature excitonic and defect emission from Ni-doped ZnO nanoneedles and V-doped ZnO nanostructured film
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DOI：
10.1088/1367-2630/12/2/023007
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发表时间：
2010-02
影响因子：
3.3
通讯作者：
Shubra Singh;D. Nakamura;K. Sakai;T. Okada;M. S. Ramachandra Rao
中科院分区：
文献类型：
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作者：
Shubra Singh;D. Nakamura;K. Sakai;T. Okada;M. S. Ramachandra Rao
我们报道了用改进的脉冲激光沉积技术生长的镍掺杂氧化锌纳米针和钒掺杂氧化锌纳米结构薄膜的生长及其低温光致发光特性。低温光致发光光谱表明，薄膜存在自由激子跃迁和束缚激子跃迁，其相对强度随温度的升高而变化。掺镍氧化锌薄膜在可见光区(2.6-2.9 meV)表现出精细的结构特征，这既是激子-极化激子纵向-横向分裂的结果，也是电子-空穴交换相互作用引起的分裂的结果。可以清楚地看到激子和可见光区域的发射，以及由纵向光学声子产生的声子复制品。讨论了低温下发射带各峰的不同可能归属。掺镍和掺钒的氧化锌薄膜的原始纳米结构也清楚地表明了掺杂对氧化锌微观结构的影响。
We report the growth and low-temperature photoluminescent characteristics of well-aligned Ni-doped ZnO nanoneedles and V-doped ZnO nanostructured thin film grown by a modified pulsed laser deposition technique. Low-temperature photoluminescence spectra of the as-grown films show the presence of free excitonic as well as bound excitonic transitions, whose relative intensity changes with increasing temperature. Ni-doped ZnO films show a characteristic fine structure in the visible range (2.6–2.9 meV) attributed to either exciton–polariton longitudinal–transverse splitting or the splitting caused by electron–hole exchange interaction. The excitonic and visible region emission can be clearly seen as can the phonon replicas produced from longitudinal optical phonons. Different possible attributions of the various peaks in the emission band at low temperature have been discussed. The as-grown nanostructures of Ni- and V-doped ZnO thin films also clearly show the effect of doping on the microstructure of ZnO.