Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask
Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask
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DOI：
10.1021/nl900531n
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发表时间：
2009-05-01
期刊：
影响因子：
10.8
通讯作者：
Huang, Yu
中科院分区：
文献类型：
--
作者：
Bai, Jingwei;Duan, Xiangfeng;Huang, Yu
本文报道了一种合理的方法，利用化学合成的纳米线作为氧等离子蚀刻的物理保护掩膜，制备了宽度小于10nm的石墨烯纳米带。原子力显微镜研究表明，所得到的纳米带的模式与掩膜纳米线的模式完全相同，因此可以产生带状或分支或交叉的石墨烯纳米结构。我们的研究表明，在不同的蚀刻时间下，所得到的GNR宽度与不同斜率的掩膜纳米线直径之间存在线性缩放关系。已经证明了宽度可控制到6纳米的gnr。我们已经制造了GNR场效应晶体管（fet），其纳米带直接连接到块石墨烯电极。在8nm GNR-FET上的电气测量显示，室温下晶体管的开/关比约为160，表明由于侧向约束而产生明显的带隙。我们发现对数刻度中的开/关比与色带宽度成反比。这种方法为石墨烯纳米带和其他石墨烯纳米结构开辟了一条新的途径；在没有精密光刻的深纳米体制下。因此，它为石墨烯纳米器件工程开辟了令人兴奋的新机遇。
We report a rational approach to fabricate graphene nanoribbons (GNRs) with sub-10 nm width by employing chemically synthesized nanowires as the physical protection mask in oxygen plasma etch. Atomic force microscopy study shows that the patterns of the resulted nanoribbons replicate exactly those of mask nanowires so that ribbons or branched or crossed graphene nanostructures can be produced. Our study shows a linear scaling relation between the resulted GNR widths and mask nanowire diameters with variable slopes for different etching times. GNRs with controllable widths down to 6 nm have been demonstrated. We have fabricated GNR field effect transistors (FETs) with nanoribbons directly connected to bulk graphene electrodes. Electrical measurements on an 8 nm GNR-FET show room temperature transistor behavior with an on/off ratio around 160, indicating appreciable band gaps arise due to lateral confinement. We find the on/off ratio in the log scale inversely scales with ribbon width. This approach opens a new avenue to graphene nanoribbons and other graphene nanostructures; in the deep nanometer regime without sophisticated lithography. It thus opens exciting new opportunities for graphene nanodevice engineering.