Parameter Sensitivity Analysis Applied to Modeling Transient Enhanced Diffusion and Activation of Boron in Silicon
Parameter Sensitivity Analysis Applied to Modeling Transient Enhanced Diffusion and Activation of Boron in Silicon
复制标题
参数敏感性分析应用于模拟硼在硅中的瞬态增强扩散和活化
DOI：
--
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
E. Seebauer
中科院分区：
文献类型：
--
作者：
Rudiyanto Gunawan;M. Jung;R. Braatz;E. Seebauer
硅中注入的硼在退火过程中的瞬时增强扩散(TED)极大地阻碍了对先进的互补金属氧化物半导体器件来说足够浅的结的形成。在工艺开发中，出于成本和效率的原因，通常使用TED的详细建模来设计退火工艺。然而，由于模型验证主要依赖于对实验掺杂剂曲线的拟合，而且现实模型包含数十个鲜为人知的参数，因此开发一套具有真正预测能力的独特速率参数已被证明是难以捉摸的。在这里，我们用有限差分方法进行形式参数敏感性分析，表明最关键的活化能是(B S-Si I)+络合物的间隙硼扩散、启动和解离释放间隙B(踢出)或Si的激活能。最大似然估计也被应用于间隙团簇形成的文献，以确定最可能的一组团簇解离的激活能。
Transient enhanced diffusion (TED) during annealing of implanted boron in silicon greatly impedes the formation of junctions that are sufficiently shallow for advanced complementary metal oxide semiconductor devices. For reasons of cost and efficiency in process development, detailed modeling of TED is often used for designing annealing procedures. However, because model validation depends primarily on fitting experimental dopant profiles, and because realistic models contain dozens of parameters that are poorly known, development of a unique set of rate parameters with true predictive capability has proven elusive. Here we have employed formal parameter sensitivity analysis by the finite difference method to show that the activation energies most critical to know accurately are those for interstitial boron diffusion, kick-in, and dissociation of the (B s - Si i ) + complex to liberate either interstitial B (kick-out) or Si. Maximum likelihood estimation is also applied to the literature for interstitial cluster formation to determine a most likely set of activation energies for cluster dissociation.