Electrical Evaluation of Sidewall Damage Caused by CH4/H2 Reactive Ion Etching
Electrical Evaluation of Sidewall Damage Caused by CH4/H2 Reactive Ion Etching
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CH4/H2 反应离子蚀刻引起的侧壁损伤的电学评估
DOI：
10.1143/jjap.37.4624
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发表时间：
1998
影响因子：
1.5
通讯作者：
K. Kishi
中科院分区：
文献类型：
--
作者：
M. Yuda;S. Kondo;Y. Noguchi;K. Kishi
研究了用甲烷（CH 4）和氢气（H2）混合气体进行反应离子刻蚀（RIE）时，p-n结梅萨二极管侧壁损伤的电学特性。采用InAlAs/InP/InAlAs双异质结构抑制n= 1扩散电流，研究了台面刻蚀侧壁处的n cong 2复合电流.从ncong 2复合电流对湿法腐蚀的依赖关系，阐明了侧壁损伤层的程度。损伤层的厚度为60至90 nm的估计从与湿蚀刻梅萨二极管的n\cong 2复合电流的比较。
Electrical properties of p-n junction mesa diodes damaged at the sidewalls by reactive ion etching (RIE) with a mixture of methane (CH4) and hydrogen (H2) were investigated. An InAlAs/InP/InAlAs double heterostructure was used to suppress the n= 1 diffusion current and, consequently, to study the n\cong 2 recombination current at the mesa-etched sidewall. The extent of damage layer at the sidewall was clarified from the dependence of n\cong 2 recombination current on the wet etching. Damaged-layer thickness of 60 to 90 nm was estimated from a comparison with the n\cong 2 recombination current of wet-etched mesa diode.