Directional Crystallizing Si Films with a Fundamental Continuous Wave Yttrium Aluminum Garnet Laser (Zone Melting for Film)
Directional Crystallizing Si Films with a Fundamental Continuous Wave Yttrium Aluminum Garnet Laser (Zone Melting for Film)
复制标题
使用基本连续波钇铝石榴石激光器定向结晶硅薄膜（薄膜区域熔化）
DOI：
10.1143/jjap.44.21
复制
发表时间：
2005
影响因子：
1.5
通讯作者：
K. Yamano
中科院分区：
文献类型：
--
作者：
N. Sotani;I. Hasegawa;D. Ide;Tomoyuki Nohda;K. Yamano
为了在玻璃基板上形成大晶粒多晶硅（poly-Si）薄膜，我们提出了一种新的横向结晶方法，即薄膜区域熔化，该方法使用高功率基本连续波钇铝石榴石（CW-YAG）激光器和吸收层。激光的红外光在吸收层处转变为热能并加热非晶硅（a-Si）薄膜。接下来，用扫描激光束沿一个方向对Si膜进行区域熔化和凝固。通过该方法，以400至1000mm/s的扫描速度成功形成了柱状结构的Si薄膜。在玻璃和石英基板上都获得了1或2μm×数百μm的非常大的典型晶粒，并且晶粒的长轴几乎平行于激光扫描方向。在这些柱状结构的硅薄膜中也观察到了织构。这些薄膜的复合载流子寿命比传统低温处理的多晶硅薄膜长几倍。
To form large-grained polycrystalline-silicon (poly-Si) films on glass substrates, we propose a new lateral crystallization method, zone melting for film, which uses a high-power fundamental continuous wave yttrium aluminum garnet (CW-YAG) laser and an absorption layer. The laser's infrared light is changed into thermal energy at the absorption layer and heats the amorphous Si (a-Si) film. Next, the Si film is zone-melted and solidified in one direction with a scanning laser beam. By this method, columnar structured Si films were successfully formed with scanning velocities from 400 to 1000 mm/s. Very large typical grains of 1 or 2 µm by few hundreds of µm were obtained on both glass and quartz substrates, and the long axes of the grains were almost parallel to the laser scanning direction. Textures were also observed in these columnar structured Si films. Recombination carrier lifetimes of these films were several times longer than those of conventional low-temperature-processed poly-Si films.