Ion Beam Etching of Silicon Dioxide on Silicon
Ion Beam Etching of Silicon Dioxide on Silicon
复制标题
硅上二氧化硅的离子束蚀刻
DOI：
10.1149/1.2132719
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发表时间：
1976
期刊：
影响因子：
--
通讯作者：
J. Hoepfner
中科院分区：
文献类型：
--
作者：
L. Mader;J. Hoepfner
使用考夫曼型离子源 (1) 在离子束蚀刻系统中产生直径 7.5 cm、能量为 0.6 keV、电流密度为 0.5 mA/cm-2 的氩离子束，然后用电子中和。概述了离子束蚀刻的原理，并显示了热生长 SiO2 层中离子蚀刻凹槽的 SEM 显微照片。使用Shipley AZ 1350 H光刻胶获得1/zm宽和0.4~ m深的凹槽。凹槽轮廓与借助离子蚀刻模型预测的轮廓非常吻合。凹槽侧壁的倾斜角通常为65° 再沉积效应降低了小线宽凹槽的有效离子蚀刻速率。如果SiO2层被离子蚀刻到硅衬底，大约100埃厚的硅表面层将被损坏。这种损坏可以通过湿法化学蚀刻完全去除。缓冲氢氟酸中离子损伤的 StO2 表面层的增强蚀刻速率用于在可控过程中逐渐减小热生长的 StO2 中的台阶。
An argon ion beam, 7.5 cm in diameter, with an energy of 0.6 keV and a current density of 0.5 mA/cm-2 is generated in an ion beam etching system using a Kaufman-type ion source (1), then neutralized by electrons. The principles of ion beam etching are outlined and SEM mierographs of ion etched grooves in thermally grown SiO2 layers are shown. Grooves 1/zm wide and 0.4~ m deep were obtained using Shipley AZ 1350 H photoresist. The groove profiles are in good agreement with those predicted with the aid of an ion etching model. The slope angle of the sidewalls of the grooves is typically 65 Redeposition effects reduce the effective ion etch rates for grooves of small linewidths. If the SiO2 layer is ion etched down to the silicon substrate, a silicon surface layer of about 100A thickness will be damaged. This damage can be completely removed by wet chemical etching. The enhanced etch rate of ion-damaged St02 surface layers in buffered hydrofluoric acid is used to taper steps in thermally grown St02 in a controllable process.