Polarity tunable complementary logic circuits
Polarity tunable complementary logic circuits
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DOI:
10.1007/s11432-022-3621-0
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发表时间:
2023-08
期刊:
影响因子:
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通讯作者:
Chen Pan;Jing Shi;Pengfei Wang;Shuang Wang;Cong Wang;Bin Cheng;S. Liang;Feng Miao
中科院分区:
文献类型:
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作者:
Chen Pan;Jing Shi;Pengfei Wang;Shuang Wang;Cong Wang;Bin Cheng;S. Liang;Feng Miao
For device M1 (see the top of Figure 1 (b)), the input signals A, B, and C are injected into the source and two gate electrodes respectively, and output signal F1 is sensed at the drain terminal. Forward biasing of PN, PP and NN junctions allows for transmitting a high-level signal (A= 1) from the source terminal to the drain terminal of device M1. In this way, the dependence of the input voltage signal on current output can be transformed into corresponding Boolean algebra of A (B+ C)= 1. Reverse biasing of the NP junction enables the prevention of a low-level signal (A= 0) at the source terminal from being transmitted to the drain terminal of device M1. This corresponds to a Boolean algebra of A BC= 1. A similar Boolean algebra of F2= C (B+ A)+ C BA= 1 can be obtained for the output signal of high level in the device M2, where the input signal terminals C and A are exchanged (see the bottom of Figure 1 (b)). With the use of a similar analysis, the Boolean algebra of F1= F2= ABC+ A (B+ C)= CBA+ C (B+ A)= 0 can be obtained for the output signal of low level in the devices M1 and M2.