Influence of annealing oxygen pressure on in-plane epitaxy and twinning in (110) YBa 2 Cu 3 O 7 − δ thin films
Influence of annealing oxygen pressure on in-plane epitaxy and twinning in (110) YBa 2 Cu 3 O 7 − δ thin films
复制标题
退火氧气压力对(110)YBa 2 Cu 3 O 7 − δ薄膜面内外延和孪生的影响
DOI:
10.1103/physrevb.60.707
复制
发表时间:
1999
期刊:
影响因子:
--
通讯作者:
Y. Segawa
中科院分区:
文献类型:
--
作者:
X. Qiu;H. Koinuma;M. Iwasaki;M. Kawasaki;Y. Segawa
The effects of annealing oxygen partial pressure on the in-plane epitaxy and twin formation in (110)-oriented ${\mathrm{YBa}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7\ensuremath{-}\ensuremath{\delta}}$ (YBCO) thin films grown on (110) ${\mathrm{SrTiO}}_{3}$ substrates by pulsed laser deposition have been studied by high-resolution x-ray diffraction, using diffraction-space mapping with a four-circle diffractometer. These films are found to have a structure in which the crystalline a and b axes are tilted about $0.5\ifmmode^\circ\else\textdegree\fi{}$ away from those of the substrates, while keeping the (110) planes parallel to each other. A decrease of in situ annealing oxygen pressure induces a reduction in twinning, which is finally suppressed in the film annealed at an oxygen pressure of 600 mTorr. Our results suggest that twin formation during a tetragonal-to-orthorhombic transformation is controlled by competition between the uniaxial force exerted at the interface by the vicinal substrate surface and the thermodynamic force originating from the difference in the lattice parameters for the a and b axes of orthorhombic YBCO.