Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
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DOI：
10.1063/1.2928228
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发表时间：
2008-05-19
影响因子：
4
通讯作者：
Kim, Jiyoung
中科院分区：
文献类型：
--
作者：
Lee, Bongki;Park, Seong-Yong;Kim, Jiyoung
我们提出了一种简便的路线，它结合了高度取向的热解石墨表面的功能化与原子层沉积（ALD）过程，以允许共形的Al 2 O3层。而三甲基铝（TMA）/H2O工艺导致选择性沉积仅沿着阶边缘，TMA/O-3工艺开始提供表面的基面上的成核位点。O-3预处理，紧接着用TMA/O-3化学的ALD工艺，形成了Al 2 O3层，在台阶边缘没有任何优先沉积。这归因于通过臭氧处理使石墨烯官能化，从而赋予ALD沉积所需的亲水特性。(C)2008年美国物理研究所。
We present a facile route which combines the functionalization of a highly oriented pyrolytic graphite surface with an atomic layer deposition (ALD) process to allow for conformal Al2O3 layers. While the trimethylaluminum (TMA)/H2O process caused selective deposition only along step edges, the TMA/O-3 process began to provide nucleation sites on the basal planes of the surface. O-3 pretreatment, immediately followed by the ALD process with TMA/O-3 chemistry, formed Al2O3 layers without any preferential deposition at the step edges. This is attributed to functionalization of graphene by ozone treatment, imparting a hydrophilic character which is desirable for ALD deposition. (C) 2008 American Institute of Physics.