In situ investigation by GISAXS and GIXD of the growth mode, strain state and shape of Ge islands during their growth on Si(001)
In situ investigation by GISAXS and GIXD of the growth mode, strain state and shape of Ge islands during their growth on Si(001)
复制标题
利用GISAXS和GIXD原位研究Ge岛在Si(001)上生长过程中的生长模式、应变状态和形状
DOI：
10.1016/j.nimb.2005.12.044
复制
发表时间：
2006
影响因子：
1.3
通讯作者：
G. Bauer
中科院分区：
文献类型：
--
作者：
M. Richard;T. Schülli;E. Wintersberger;G. Renaud;G. Bauer
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H