HCI/BTI coupled model: The path for accurate and predictive reliability simulations
HCI/BTI coupled model: The path for accurate and predictive reliability simulations
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HCI/BTI 耦合模型：准确和预测可靠性仿真的路径
DOI：
10.1109/irps.2014.6860673
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
V. Huard
中科院分区：
文献类型：
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作者：
F. Cacho;P. Mora;W. Arfaoui;X. Federspiel;V. Huard
制造商对CMOS晶圆级可靠性的标准鉴定包括从一侧鉴定BTI机制和从另一侧独立鉴定HCI。它们各自的退化被认为是累加的。在这里，我们研究这两种机制之间的相互作用，通过替代应力序列在设备水平，也在环形振荡器。在可靠性设计仿真框架中提出并实现了交互形式化。虽然两种老化机制共存并相互作用，但我们认为机制的起源（非导电HCI，低E HCI......）并量化耦合的重量。我们还指出，如果没有这种相互作用的考虑，在可靠性设计模拟，结果是显着不准确和悲观。最后，我们提出了大量的标准单元RO在封装级，在不同的应力/时间条件下的退化结果，并得出结论，这种功能的仿真是必须有在逻辑设计平台的表征，以避免高估的时序退化。
The standard qualification of CMOS Wafer Level Reliability by manufacturers consists in qualifying BTI mechanism from one side and HCI from another side independently. Their respective degradation are then assumed to be additive. Here, we study the interaction between both mechanisms through alternative stress sequences at device level and also in ring oscillators. Interaction formalism is proposed and implemented in Design-in-Reliability simulation framework. While two ageing mechanisms co-exist and are interacting, we consider the origin of mechanisms (non-conducting HCI, low-E HCI...) and quantify the weight of coupling. We also point out that without this interaction consideration in Design-in-Reliability simulation, results are significantly inaccurate and pessimistic. Finally, we present degradation results for a large amount of standard cell RO-based at package level, at different stress/time conditions and conclude that this feature of simulation is a must have in logic Design Platform characterization in order to avoid over-estimation of timing degradation.