Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
Behavior of Misfit Dislocations in GaAs Epilayers Grown on Si at Low Temperature by Molecular Beam Epitaxy
复制标题
分子束外延低温硅基GaAs外延层失配位错行为
DOI：
10.1143/jjap.32.637
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Yasunari Shiba Yasunari Shiba
中科院分区：
文献类型：
--
作者：
K. Asai;Hisashi Katahama Hisashi Katahama;Yasunari Shiba Yasunari Shiba
用光学干涉法和X射线衍射法测量了生长在Si上的GaAs缓冲层中的失配位错的应力。在250°C下生长的具有各种厚度（0.05 - 0.20 μm）的缓冲层在各种温度（400 - 600°C）下退火。覆盖层在300°C下生长。随着退火温度或厚度的增加，应力由压应力变为拉应力。无应力GaAs/Si晶片是用0.10 μ m厚的缓冲层在500°C下退火制成的。这些结果表明，在低温生长中，重要的是要优化退火温度和缓冲层的厚度。此外，在[011]和[01 <$1]之间观察到不对称应力。这种不对称性是由α-和β-位错之间的位错速度或成核能的差异引起的。
The behavior of misfit dislocations in GaAs buffer layers grown on Si was investigated by the measurement of stresses using optical interferometry and X-ray diffraction. The buffer layers grown at 250°C with various thicknesses (0.05∼0.20 µm) were annealed at various temperatures (400∼600°C). The overlayers were grown at 300°C. With increasing annealing temperature or thickness, the stresses changed from compressive to tensile. The stress-free GaAs/Si wafer was produced with a 0.10-µm-thick buffer layer annealed at 500°C. These results indicate that in low-temperature growth, it is important to optimize both the annealing temperature and the thickness of the buffer layer. In addition, the asymmetric stresses were observed between [011] and [01̄1]. This asymmetry was caused by the difference in dislocation velocities or nucleation energies between α- and β-dislocations.