Surface Potential of Polyimide Langmuir-Blodgett Films Induced by Photoirradiation
Surface Potential of Polyimide Langmuir-Blodgett Films Induced by Photoirradiation
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光辐照诱导聚酰亚胺 Langmuir-Blodgett 薄膜的表面电势
DOI：
10.1143/jjap.33.l1616
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
E. Itoh
中科院分区：
文献类型：
--
作者：
M. Iwamoto;E. Itoh
在光照射前后检查了各种金属电极上的两种聚酰亚胺（PI 和 TRIPI）Langmuir-Blodgett 薄膜的表面电位。在光照射之前获得了饱和表面电势与金属功函数之间的线性关系，这表明多余的电荷从金属转移到热处理的PI LB薄膜中，直到在界面处达到热力学平衡。热处理后的 PI LB 膜在光照射下带正电，而热处理后的 TRIPI LB 膜带负电。结果发现，光照射后，金属的饱和表面电势与功函数之间再次获得线性关系。
Surface potentials in two kinds of polyimide (PI and TRIPI) Langmuir-Blodgett films on various metal electrodes were examined before and after photoirradiation. Linear relationships between the saturated surface potential and the work function of metals were obtained before photoirradiation, suggesting that excess charges were transferred from metals into heat-treated PI LB films until thermodynamic equilibrium was attained at the interface. The heat-treated PI LB films were charged positively with photoirradiation, whereas the heat-treated TRIPI LB films were charged negatively. It was found that the linear relationships between the saturated surface potential and the work function of metals were again obtained after photoirradiation.