Pathways of Exciton Triggered Hot‐Carrier Injection at Plasmonic Metal−Transition Metal Dichalcogenide Interface
Pathways of Exciton Triggered Hot‐Carrier Injection at Plasmonic Metal−Transition Metal Dichalcogenide Interface
复制标题
DOI：
10.1002/adom.202100070
复制
发表时间：
2022-01
影响因子：
9
通讯作者：
Xiewen Wen;Weipeng Wang;Xiang Zhang;Hailong Chen;S. Jia;Y. Gong;Weibing Chen;Yanfeng Wang;Hanyu Zhu;Junrong Zheng;P. Ajayan;J. Lou
中科院分区：
文献类型：
--
作者：
Xiewen Wen;Weipeng Wang;Xiang Zhang;Hailong Chen;S. Jia;Y. Gong;Weibing Chen;Yanfeng Wang;Hanyu Zhu;Junrong Zheng;P. Ajayan;J. Lou
表面等离子体激元诱导的热载流子注入到半导体过渡金属二硫属化物（TMD）单层已经被广泛研究。然而，通过充分考虑弱金属-TMD相互作用和TMD的激子形成动力学来全面理解注入动力学是缺失的。在这里，通过系统地研究不同等离子体金属和TMD之间的界面相互作用动力学来阐明热载流子注入途径。该途径突出了激子形成时间尺度作为界面载流子注入的阈值，在此之前，等离子体热载流子和自由电子空穴对在界面上非相干地弛豫。注入的热载流子将与激子相互作用形成带电准粒子，如具有延长寿命的三电子。该途径揭示了等离子体激元热载流子-TMD相互作用的基本机制，打开了可控操纵热载流子注入过程的可能性，并允许未来研究在金属-TMD系统中的光电引导。
Surface plasmon induced hot‐carrier injection to semiconducting transition metal dichalcogenide (TMD) monolayers has been extensively studied. However, comprehensive understanding of the injection kinetics by fully considering the weak metal−TMD interaction and the TMDs’ exciton formation kinetics is missing. Here, a hot‐carrier injection pathway is elucidated by systematically investigating the interfacial interaction kinetics among different plasmonic metals and TMDs. The pathway highlights the exciton formation timescale as a threshold for interfacial carrier injection, before which plasmonic hot carriers and free electron−hole pairs are relaxed incoherently across the interface. The injected hot carriers will interact with excitons to form charged quasiparticles as trions, which have extended lifetime. The pathway reveals the fundamental mechanism of the plasmonic hot‐carrier−TMD interactions, opens the possibility of controllable manipulation of hot‐carrier injection process, and allows future research toward opto‐electrical guidance of trions in metal−TMD systems.